Mémoires flash industrielles

DOM USB 16Go SLC

Ref.Mozaïk Storage : PMS-4177

La référence SFUI016GK1AE1TO-I-QC-2A1-STD de la gamme U-500 Series du fabricant Swissbit AG est également proposée avec différentes capacités de mémoire flash et plages de températures. Nous serons ravis de vous fournir un devis et de répondre à toutes vos questions. N'hésitez pas à nous contacter :

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Description

Ref.Fabricant : SFUI016GK1AE1TO-I-QC-2A1-STD
Gamme : U-500 Series
Fabricant : Swissbit AG
Temp.Fonct : -40°C ~ +85°C
Fact.Forme : 2.00mm pitch

Informations

Fabricant Swissbit AG
Numéro d'article fabricant SFUI016GK1AE1TO-I-QC-2A1-STD
Sous-catégorie DOM
Interface USB 3.1
Type de Flash SLC
Facteur de forme 2.00mm pitch
Capacité 16 Go
Vitesse de lecture (max.) 174 Mo/s
Vitesse d’écriture (max.) 91 Mo/s
Téraoctets écrits (TBW) (max.) 1608 To
MTBF 3 000 000 heures
Fonctionnalité S.M.A.R.T. Oui
PowerLossProtector Oui
Température de fonctionnement -40°C ~ +85°C
Température de stockage -40°C ~ +85°C
Chipset Industrial Grade
Alimentation de fonctionnement 3.3 V
5.0 V
Vibrations 50G
Chocs 1500G
Informations supplémentaires USB3.1 solid state flash drive for internal 9(10)-pin USB connector terminal
Fully compliant with USB specification 3.1 Gen 1 (SuperSpeed
5Gb/s burst)
Fully backward compliant with USB 2.0/1.1 systems (High/Full Speed - 480/12Mb/s burst)
Dimension of 26.65 x 36.8mm
2.54mm or 2.00mm connector with keyed pin9
Mounting hole electrically not connected (optional grounded)
Fixed drive (USB hard drive - optional removable)
LED for operation indication
Write protect switch (optional)
Diagnostic features with Life Time Monitoring tool support
Firmware update in field possible
High performance USB3.1 specification
Up to 1100 IOPS write and 3000 IOPS read (4KByte transfers)
Up to 90 MBytes/s sequential write and 175 MBytes/s read speed
Power Supply: (Low-power CMOS technology)
3.1 to 5.5V operating voltage
Optimized FW algorithms especially for high read access and long data retention applications
Patented power-off reliability technology
Near Miss ECC technology
Minimizes the risk of uncorrectable bit failure over the product life time. Each read command analyzes the ECC margin level and refreshes data if necessary.
Read Disturb Management
The read commands per block are monitored and the content is refreshed when critical levels are reached.
Wear Leveling technology
Equal wear leveling of static and dynamic data. The wear leveling assures that dynamic data as well as static data is balanced evenly across the memory. As a result the maximum write endurance of the device is guaranteed.
Data Care Management
The interruptible background process maintains the user data integrity by compensating Read Disturb effects or Retention degradation due to high temperature effects.
UBER <10-17
High reliability
SLC NAND Flash with highest program erase cycles per block
Certificats EMC/ CE / FCC / RoHS / WEEE/ REACh
Poids 5 g
Dimensions 36.8mm x 26.65mm