Mémoires flash industrielles
DOM USB 4Go SLC
Ref.Mozaïk Storage : PMS-4166
SFUI4096J1AE2TO-I-QT-2B1-STD de la gamme U-500 Series de Swissbit AG , aussi proposé avec d'autres capacités et plages de températures. Contactez-nous pour toute demande de devis :
Description
- Ref.Fabricant : SFUI4096J1AE2TO-I-QT-2B1-STD
- Gamme : U-500 Series
- Fabricant : Swissbit AG
- Temp.Fonct : -40°C ~ +85°C
- Fact.Forme : 2.54mm pitch
Informations
- Fabricant Swissbit AG
- Numéro d'article fabricant SFUI4096J1AE2TO-I-QT-2B1-STD
- Sous-catégorie DOM
- Interface USB 3.1
- Type de Flash SLC
- Facteur de forme 2.54mm pitch
- Capacité 4 Go
- Vitesse de lecture (max.) 53 Mo/s
- Vitesse d’écriture (max.) 32 Mo/s
- Téraoctets écrits (TBW) (max.) 394 To
- MTBF 3 000 000 heures
- Fonctionnalité S.M.A.R.T. Oui
- PowerLossProtector Oui
- Température de fonctionnement -40°C ~ +85°C
- Température de stockage -40°C ~ +85°C
- Chipset Industrial Grade
- Alimentation de fonctionnement 3.3 V5.0 V
- Vibrations 50G
- Chocs 1500G
- Informations supplémentaires USB3.1 solid state flash drive for internal 9(10)-pin USB connector terminal Fully compliant with USB specification 3.1 Gen 1 (SuperSpeed 5Gb/s burst) Fully backward compliant with USB 2.0/1.1 systems (High/Full Speed - 480/12Mb/s burst) Dimension of 26.65 x 36.8mm 2.54mm or 2.00mm connector with keyed pin9 Mounting hole electrically not connected (optional grounded) Fixed drive (USB hard drive - optional removable) LED for operation indication Write protect switch (optional) Diagnostic features with Life Time Monitoring tool support Firmware update in field possible High performance USB3.1 specification Up to 1100 IOPS write and 3000 IOPS read (4KByte transfers) Up to 90 MBytes/s sequential write and 175 MBytes/s read speed Power Supply: (Low-power CMOS technology) 3.1 to 5.5V operating voltage Optimized FW algorithms especially for high read access and long data retention applications Patented power-off reliability technology Near Miss ECC technology Minimizes the risk of uncorrectable bit failure over the product life time. Each read command analyzes the ECC margin level and refreshes data if necessary. Read Disturb Management The read commands per block are monitored and the content is refreshed when critical levels are reached. Wear Leveling technology Equal wear leveling of static and dynamic data. The wear leveling assures that dynamic data as well as static data is balanced evenly across the memory. As a result the maximum write endurance of the device is guaranteed. Data Care Management The interruptible background process maintains the user data integrity by compensating Read Disturb effects or Retention degradation due to high temperature effects. UBER <10-17 High reliability SLC NAND Flash with highest program erase cycles per block
- Certificats EMC/ CE / FCC / RoHS / WEEE/ REACh
- Poids 5 g
- Dimensions 36.8mm x 26.65mm
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